III-V MOSFETs for Ultimate CMOS

THE CLIENT: Freescale Semiconductors

THE BACKGROUND: The continued decrease in the size of silicon MOSFETs is slowing down and there is doubt whether they can continue below the 20nm technology node using the planar technology currently employed. Thus the use of higher mobility materials is being investigated, in particular III-V materials for n-type and Ge for p-type devices.